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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS5140V 40 V low VCEsat PNP transistor
Product data sheet Supersedes data of 2001 Oct 19 2002 Mar 20
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
FEATURES * 300 mW total power dissipation * Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package * Improved thermal behaviour due to flat leads * Self alignment during soldering due to straight leads * Low collector-emitter saturation voltage * High current capability APPLICATIONS * General purpose switching and muting * LCD back lighting * Supply line switching circuits * Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. MARKING
handbook, halfpage
PBSS5140V
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 DESCRIPTION collector collector base emitter collector collector PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. -40 -1 -2 UNIT V A A m
equivalent on-resistance <340
6
5
4 1, 2, 5, 6 3
TYPE NUMBER PBSS5140V 25
MARKING CODE
4 1 Top view 2 3
MAM446
Fig.1 Simplified outline (SOT666) and symbol.
2002 Mar 20
2
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Tamb Notes PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - - - - -65 - -65 MIN.
PBSS5140V
MAX. -40 -40 -5 -1 -2 -300 -1 300 500 +150 150 +150
UNIT V V V A A mA A mW mW C C C
1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on a printed-circuit board, single side copper, tinplated and standard footprint. 2. Device mounted on a printed-circuit board, single side copper, tinplated and mounting pad for collector 1 cm2. Soldering The only recommended soldering is reflow soldering. CONDITIONS VALUE 410 215 UNIT K/W K/W
2002 Mar 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = -40 V; IE = 0 VCE = -30 V; IB = 0 VEB = -5 V; IC = 0 VCE = -5 V; IC = -1 mA VCE = -5 V; IC = -100 mA VCE = -5 V; IC = -500 mA VCE = -5 V; IC = -1 A VCEsat collector-emitter saturation voltage IC = -100 mA; IB = -1 mA IC = -500 mA; IB = -50 mA IC = -1 A; IB = -100 mA RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -1 A; IB = -50 mA VCE = -5 V; IC = -1 A IC = -50 mA; VCE = -10 V; f = 100 MHz MIN. - - - 300 300 250 160 - - - - - 150
PBSS5140V
TYP. - - - - - - - - -80 -120 -200 240 - - - -
MAX. -100 -50 -100 -100 - 800 - - -140 -170 -310 <340 -1.1 -1 - 12
UNIT nA A nA nA
VCB = -40 V; IE = 0; Tamb = 150 C -
mV mV mV m V V MHz pF
IC = -500 mA; IB = -50 mA; note 1 -
VCB = -10 V; IE = Ie = 0; f = 1 MHz -
2002 Mar 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
PACKAGE OUTLINE
PBSS5140V
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2002 Mar 20
5
NXP Semiconductors
Product data sheet
40 V low VCEsat PNP transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS5140V
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2002 Mar 20
6
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp7 Date of release: 2002 Mar 20 Document order number: 9397 750 09427

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